| PART |
Description |
Maker |
| 2N1047A |
GERMANIUM POWER TRANSISTORS
|
New Jersey Semiconductor
|
| ADY11 |
(ADYxx) Germanium Power Transistors
|
GPD Optoelectronic Devices
|
| NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
| NTE102 |
Germanium Complementary Transistors Power Output, Driver
|
NTE[NTE Electronics]
|
| NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| AC188 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| 2N187 2N190 2N191 |
Alloy Junction Germanium Transistors
|
Semitronics
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
